Effects of Polaron Formation in Semiconductor Quantum Dots on Transport Properties
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概要
- 論文の詳細を見る
We theoretically examine the effects of polaron formation in quantum dots on the transport properties. When a separation between two electron-levels in a quantum dot matches the energy of the longitudinal optical (LO) phonons. the polarons are strongly formed. The Rabi splitting between the levels is observable in a peak structure of the differential conductance G as a function of the bias voltage. The polaron formation suppresses the peak height of G, which is due to the competition between the resonant tunneling (resonance between a level in the dot and states in the leads) and the polaron formation (Rabi oscillation between two levels in the dot). G shows a sharp dip at the midpoint between the split peaks. This is attributable to the destructive interference between bonding and anti-bonding states in a composite system of electrons and phonons.
- 社団法人日本物理学会の論文
- 2003-06-15
著者
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Eto Mikio
Faculty Of Science And Technology Keio University
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TASAI Tomoki
Faculty of Science and Technology, Keio University
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