Theoretical Calculations of Field Emission from AlxGa1-xN for $0\leq x\leq 1$

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概要

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• The field emission current density $j$ from the ternary alloy AlxGa1-xN is calculated as a function of stoichiometric composition $x$ for $0\leq x\leq 1$. By considering both the doping and the internal field emission as sources of the carrier concentration $n$, we find $n$ as a function of $x$ for $0\leq x\leq 1$. Then, we use a fully exact scheme to calculate $j$ from AlxGa1-xN as a function of $x$ and the field $F$. The calculated characteristic of $j$ is found to be in agreement with the experimental observation. It is also found that the major factor governing $j$ is the electron affinity $\chi$ at low or intermediate $F$, but the carrier concentration $n$ at high $F$.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-10-15

著者

• Yoon Byung-g.

  Department Of Physics University Of Ulsan

• Chung Moon

  Department Of Microbiology And Molecular Biology Chungnam National University

• Chung Moon

  Department of Physics, University of Ulsan, Ulsan 680-749, Republic of Korea

• Yoon Byung-G.

  Department of Physics, University of Ulsan, Ulsan 680-749, Republic of Korea

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• Theoretical Calculations of Field Emission from AlxGa1-xN for $0\leq x\leq 1$

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