Luminescence Properties of Y2O3:Tb3+ Whiskers Fabricated by Chemical Vapor Deposition

概要

論文の詳細を見る
Luminescence properties of highly $\langle 100\rangle$-oriented Y2O3:Tb3+ whiskers obtained by chemical vapor deposition on Si substrate have been investigated over a wide temperature range for different dopant concentrations. A considerable thermally stimulated increase of the green Tb3+ emission intensity was found in the temperature range of 98–433 K under 325 nm laser excitation. At temperatures higher than 433 K, the emission exhibits temperature quenching with the activation energy of ${\sim}0.98$ eV. This behavior is discussed on the basis of the results of the time-decay measurements of the emission in the temperature range of 300–773 K. The thermally stimulated intensity increase is attributed to the thermal broadening of the photoluminescence excitation spectrum, whereas the temperature quenching is tentatively ascribed to the thermal activation of electrons from the excited 4f75d configuration to the conduction band. The decay time of the green Tb3+ emission exhibits shortening with increasing dopant concentration, which is considered in terms of the energy transfer processes between the Tb3+ ions.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-10-15