Resistivity Measurements of Directly Bonded Si Wafers

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概要

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• Resistivities of Si wafers bonded by surface-activation bonding are measured by the four-probe method. The bonded Si wafers are annealed up to 900°C. The resistivity of the bonding interface increases at 600°C and 700°C, and recovers at 900°C. A current–voltage curve of p–n bonded Si wafers is also shown.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2004-10-15

著者

• Kanno Ikuo

  Graduate School Of Engineering Kyoto Univ.

• NOMIYA Seiichiro

  Raytech Corporation

• NAKAYAMA Atsushi

  Graduate School of Engineering, Kyoto University

• Onabe Hideaki

  Raytech Corp.

• Nakayama Atsushi

  Graduate School of Engineering, Kyoto University, Sakyo, Kyoto 606-8501, Japan

• Nomiya Seiichiro

  Raytech Corporation, Utsunomiya, Tochigi 321-0904, Japan

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