Control of the Figure of Merit by the Anti-site Defect in Thermoelectric Materials (Bi,Sb)2Te3

概要

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Basic physical properties of the thermoelectric materials of p-type (Bi,Sb)2Te3 have been measured. The temperature $T_{\text{Z-peak}}$, at which the figure of merit $Z$ takes a maximum, the resistivity and the Seebeck coefficient show the linear Hall coefficient dependences. These behaviors are strongly related to the anti-site defect between the Bi (or Sb) and the Te site and the $T_{\text{Z-peak}}$ systematically decreases with the decrease of the anti-site defect which corresponds to the decrease of the number of hole carriers. It is proposed that the figure of merit could be controlled by the anti-site defect. A possibility of the application of the thermoelectric materials at low temperature is also proposed.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-09-15