Strain Evaluation for Sapphire Using a Microfocus X-ray Diffraction System

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概要

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• A strain evaluation technique using a microfocus X-ray diffraction system was developed. The target current was 84 μA, and an X-ray brightness of $52\times 10^{9}$ W/m2 was obtained. The X-ray was condensed to a converging angle of 0.09° with a convergent unit, and the minimum focus diameter was 60 μm. The maximum principal strain for a sapphire (1 $-1$ 2) plane was in excellent agreement with the value estimated by strain gauge.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-08-15

著者

• Kita Takuji

  Synergy Ceramics Laboratory Fine Ceramics Research Association

• Kawamoto Hiroshi

  Synergy Ceramics Laboratory Fine Ceramics Research Association

• Nagano Yasuo

  Synergy Ceramics Laboratory Fine Ceramics Research Association

• Yokoyama Ryouichi

  X-ray Research Laboratory Rigaku Co.

• Yokoyama Ryouichi

  X-ray Research Laboratory, Rigaku Co., 3-9-12 Matsubara-cho, Akishima, Tokyo 196-8666, Japan

• Kita Takuji

  Synergy Ceramics Laboratory, Fine Ceramics Research Association, 2-4-1 Mutsuno, Atsuta-ku, Nagoya, Aichi 456-8587, Japan

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• OS8(1)-4(OS08W0217) Development of Strain Evaluation Method Using Micro-Focus X-Ray Beam
• Development of a Strain Evaluation Technique Using a Micro Focus X-ray Beam
• OS8(1)-3(OS08W0163) Measurement of Lattice Defect and Local Strain in Polished Sapphire by Transmission Electron Microscopy
• Strain Evaluation for Sapphire Using a Microfocus X-ray Diffraction System

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