Formation of LaSi2-x Layers on Si by High-Current La Ion Implantation

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概要

• 論文の詳細を見る

• Lanthanum ion implantation into Si was conducted using a metal vapor vacuum arc ion source, and the continuous and relatively stable LaSi2-x layers on the Si surface with a strong texture and low electrical resistivity were directly obtained with neither external heating nor post annealing. The optimal experimental parameters for synthesizing LaSi2-x are an ion current density of 52.8 μA/cm2, corresponding to a formation temperature of around 390°C, and an implantation dose of $2\times 10^{17}$ ions/cm2. In addition, the formation mechanism of the LaSi2-x phase is discussed, in terms of the temperature rise caused by ion beam heating and the ion dose in the process of implantation.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-05-15

著者

• Liu Bai

  Advanced Materials Laboratory Department Of Materials Science And Engineering Tsinghua University

• Tang Xiao

  Advanced Materials Laboratory Department Of Materials Science And Engineering Tsinghua University

• Wang Run

  Advanced Materials Laboratory Department Of Materials Science And Engineering Tsinghua University

• Cheng Xiang

  Advanced Materials Laboratory Department Of Materials Science And Engineering Tsinghua University

• Cheng Xiang

  Advanced Materials Laboratory, Department of Materials Science and Engineering, Tsinghua University, Beijing100084, China

• Liu Bai

  Advanced Materials Laboratory, Department of Materials Science and Engineering, Tsinghua University, Beijing100084, China

• Wang Run

  Advanced Materials Laboratory, Department of Materials Science and Engineering, Tsinghua University, Beijing100084, China

• Tang Xiao

  Advanced Materials Laboratory, Department of Materials Science and Engineering, Tsinghua University, Beijing100084, China

関連論文

• Formation of LaSi_ Layers on Si by High-Current La Ion Implantation
• Stability of the Metastable Phases in the Co-Ta System Studied by ab initio and Thermodynamic Calculations Together with Ion-Beam-Mixing Experiment(Condensed Matter : Structure, Mechanical and Thermal Properties)
• Confirmation of the Nonequilibrium States of AB_3 Type in an Immiscible Y-Ta System by Ab Initio Calculation : Structure and Mechanical and Thermal Properties of Condensed Matter
• Formation of LaSi2-x Layers on Si by High-Current La Ion Implantation

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