Electrical and Structural Properties of Refractory Metal Multilayer Au/Ti/W/Ti Ohmic Contacts to n-GaAs
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概要
- 論文の詳細を見る
The ohmic contact characteristics of Au/Ti/W/Ti on n-GaAs were evaluated. Structural and electrical properties were studied by means of X-ray diffraction (XRD), Auger energy spectrum (AES) and an HP4145B analyzer. AES results show that W is a good barrier for preventing Ga and As from out-diffusing. Electrical measurement showed a minimum ohmic contact resistance of $5.5\times 10^{-6}$ $\Omega$cm2. Thermal annealing results revealed that Au/Ti/W/Ti contact to GaAs treated by a (NH4)2S solution can withstand a temperature of 400°C for 15 h. This indicates that Au/Ti/W/Ti contact to (NH4)2S-treated GaAs may be suitable for practical application.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-05-15
著者
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Zhou Jian
Shanghai Micro-system And Information Technology Institute Chinese Academy Of Science
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Liu Wenchao
Shanghai Micro-system And Information Technology Institute Chinese Academy Of Science
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Xia Guanqun
Shanghai Micro-system And Information Technology Institute Chinese Academy Of Science
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Li Binhan
Shanghai Micro-system And Information Technology Institute Chinese Academy Of Science
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Li Binhan
Shanghai Micro-system and Information Technology Institute, Chinese Academy of Science, Changning RD 865, Shanghai, 200050, P.R. China
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Wu Binhe
Shanghai Micro-system and Information Technology Institute, Chinese Academy of Science, Changning RD 865, Shanghai, 200050, P.R. China
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Xia Guanqun
Shanghai Micro-system and Information Technology Institute, Chinese Academy of Science, Changning RD 865, Shanghai, 200050, P.R. China
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Zhou Jian
Shanghai Micro-system and Information Technology Institute, Chinese Academy of Science, Changning RD 865, Shanghai, 200050, P.R. China
関連論文
- Electrical properties and thermally stability of Au/W/Ti ohmic contacts to (NH_4)_2S treated n-GaAs
- Electrical properties and thermally stability of Au/W/Ti ohmic contacts to (NH_4)_2S treated n-GaAs
- Electrical and Structural Properties of Refractory Metal Multilayer Au/Ti/W/Ti Ohmic Contacts to n-GaAs