Electrical properties and thermally stability of Au/W/Ti ohmic contacts to (NH_4)_2S treated n-GaAs

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概要

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• The electrical properties and thermally stability of Au/W/Ti ohmic contact to n-GaAs were investigated by means of X-ray diffraction (XRD), Auger Energy Spectrum (AES) and HP4145B analyzer. Structural analysis revealed a Ti-As and Ga-Ti phase in the interface between metal multilayer and GaAs at higher annealing temperature. AES results show that W is a good barrier for reducing the out-diffusion of GaAs. Electrical measurement shows a minimum ohmic contact resistance of 2 × 10^<-6> Ωcm^2 in (NH_4)_2S treated sample. Thermal annealing experiment gives the result that Au/W/Ti contact to (NH_4)_2S treated GaAs can stand 400℃ for 20 hours. All these indicate that Au/W/Ti contact to (NH_4)_2S treated GaAs may be suitable for practical using.

• 一般社団法人電子情報通信学会の論文
• 2002-06-25

著者

• Zhou Jian

  Shanghai Micro-system And Information Technology Institute Chinese Academy Of Science

• Liu Wenchao

  Shanghai Micro-system And Information Technology Institute Chinese Academy Of Science

• Xia Guanqun

  Shanghai Micro-system And Information Technology Institute Chinese Academy Of Science

• LI Binhan

  Shanghai Micro-system and Information Technology Institute, Chinese Academy of Science

• Li Binhan

  Shanghai Micro-system And Information Technology Institute Chinese Academy Of Science

関連論文

• Electrical properties and thermally stability of Au/W/Ti ohmic contacts to (NH_4)_2S treated n-GaAs
• Electrical properties and thermally stability of Au/W/Ti ohmic contacts to (NH_4)_2S treated n-GaAs
• Electrical and Structural Properties of Refractory Metal Multilayer Au/Ti/W/Ti Ohmic Contacts to n-GaAs

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