Photoelectron Spectroscopy Study of the Oxidation of TiC(100)

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概要

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• The oxidation process of a TiC(100) surface has been investigated by photoelectron spectroscopy (PES) and low-energy electron diffraction (LEED). It is found that, when the surface is exposed to O2 at room temperature, the C atoms in the substrate are depleted and the substrate's Ti atoms are oxidized to form a disordered TiOx ($1.5<x<2.0$) layer at 100–4000 L. When the surface covered with the TiOx layer is heated, the work function decreases with increasing heating temperature. The work function reaches its minimum value, which is lower than that of the clean surface by ${\sim}1.0$ eV, upon heating at 900–1000°C. With heating to ${\sim}1000$°C, the TiOx oxide layer is reduced to a TiO-like state. The structure of the TiO-like layer is discussed on the basis of LEED and angle-resolved PES results, and it is proposed that the oxide layer is a well-ordered TiO(100) layer which is epitaxially grown on the TiC(100) surface.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-15

著者

• SHIROTORI Yutaka

  Department of Chemistry and Materials Science, Tokyo Institute of Technology

• Ozawa Ken-ichi

  Department Of Chemistry And Materials Science Tokyo Institute Of Technology

• Edamoto Kazuyuki

  Department Of Chemistry And Materials Science Tokyo Institute Of Technology

• Otani Shigeki

  National Inst. Materials Sci. Ibaraki Jpn

• Ozawa Ken-ichi

  Department of Chemistry and Materials Science, Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo 152-0033, Japan

• Sawada Kosuke

  Department of Chemistry and Materials Science, Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo 152-0033, Japan

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