Hydrogen Sensor Based on RF-Sputtered Thermoelectric SiGe Film

概要

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Si0.8Ge0.2 thin film was sputtered on an alumina substrate by the RF-sputtering method. After annealing in flowing Ar atmosphere, platinum film, which acts as a catalyst of the combustible sample gas, was further sputtered on half the surface area of SiGe film. The hydrogen-sensing properties were investigated for the development of potential applications of the device structure as a hydrogen sensor that makes use of the thermoelectric (TE) effect. The measurement results indicate that a reliable output voltage signal was successfully realized when the element was exposed to an environment with a certain hydrogen concentration. The operating temperature for the device was around 100°C, and the response and recovery time corresponding to 90% voltage change were both shorter than 50 s on switching the atmosphere from synthetic air to 3% H2. The detectable concentration of the device ranged from 0.01% to 3%. Furthermore, a good selectivity to hydrogen was also exhibited.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
2003-04-15