Etching Characteristics of Organic Polymers in the Magnetic Neutral Loop Discharge Plasma
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概要
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Etchings of organic low-$k$ materials, FLARE, SiLK and polyimide films were carried out in a N2-dominant mixed gas plasma generated by a magnetic neutral loop discharge (NLD) method at a low pressure below 1 Pa. The results showed that the uppermost layers on the top surface and sidewall surface were composed of tightly bonded C–N $\mathit{sp}^{3}$, so anisotropic profiles were obtained in the case of the N2-dominant mixture ratio of the N2 + H2 plasma. Based on this result, we also investigated polyimide deep etching under the same condition, and successfully obtained an anisotropic etched profile with the depth of about 8 μm and the linewidth of about 0.5 μm (aspect ratio of 16).
- 2003-03-15
著者
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Uchida Taijiro
Institute For Semiconductor Technologies Ulvac Inc.
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Morikawa Yasuhiro
Institute For Semiconductor Technologies Ul Va C Japan Lid.
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Uchida Taijiro
Institute for Semiconductor Technologies, ULVAC, Inc., 1220-1 Suyama, Susono, Shizuoka 410-1231, Japan
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Morikawa Yasuhiro
Institute for Semiconductor Technologies, ULVAC, Inc., 1220-1 Suyama, Susono, Shizuoka 410-1231, Japan
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Hayashi Toshio
Institute for Semiconductor Technologies, ULVAC Japan Ltd., 2500 Hagisono, Chigasaki, Kanagawa 253-8543, Japan
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