Investigations of Surface Reactions in Neutral Loop Discharge Plasma for High-Aspect-Ratio SiO2 Etching
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概要
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The relationship between fine etching and gas structure in magnetic neutral loop discharge (NLD) plasma has been investigated using C4F8, C3F8, and CF3FOC=CF2 (HFE-216) gases. It was found that CF3+ ions were effectively generated in the HFE-216 plasma compared with those in the C4F8 or C3F8 plasma under the same conditions. Hydrofluorocarbon (HFC) gases such as CH2F2 (HFC-32) and CH3CHF2 (HFC-152a) were also employed to realize highly selective etching for SiO2 to the photoresist. C1s X-ray photoelectron spectra showed a prevalence of C–C and C–CFx bonds in the films deposited on the surface in the HFC plasma. This implies that the deposited film was mainly composed of carbon atoms. It was also found from X-ray photoelectron spectroscopy (XPS) and Fourier transformed infrared (FTIR) analyses that the chemical state of fluorine in this film was not C–F, but H–C–F. This may lead to the realization of microloading free etching with high resist selectivity in the HFE-216/HFC-152a mixture plasma. Studies on the relationship between etch performance and thin H–C–F polymer film formation were carried out in the HFE-216/HFC-152a mixture plasma. It can be thought that the interaction of the H–C–F film on the surface and CxFy species from the plasma is very low compared with that of a C–F film. The H–C–F film on the sidewall may play serve as a lubricant and may transport etchants to the bottom of the etched pattern. As a result, 50-nm-diameter holes and 40 nm space patterns with aspect ratios of 18 and 22.5, respectively, were successfully fabricated in the HFE-216 + HFC-152a + O2 plasma. The H–C–F film formation on the etched surface enables high-aspect-ratio etching with high selectivity.
- 2003-03-15
著者
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Uchida Taijiro
Institute For Semiconductor Technologies Ulvac Inc.
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Morikawa Yasuhiro
Institute For Semiconductor Technologies Ul Va C Japan Lid.
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Chen Wei
Institute For Materials Research Tohoku University
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Hayashi Toshio
Institute for Semiconductor Technologies, ULVAC Japan Ltd., 2500 Hagisono, Chigasaki, Kanagawa 253-8543, Japan
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