Time Integrated/Resolved Photoluminescence of ZnO Films Deposited on Sapphire and GaAs

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概要

• 論文の詳細を見る

• ZnO films were deposited on sapphire (0001) and single crystalline GaAs (001) substrates using a metal-organic chemical vapor deposition (MOCVD) technique, and systematically analyzed in terms of time integrated and resolved photoluminescence (TIPL and TRPL) as well as electrical properties. The TIPL, TRPL and electrical properties showed significant differences depending on the nature of the substrate. The correlation between TIPL, TRPL and electrical properties was also investigated based on defects in the ZnO films.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-12-15

著者

• MYOUNG Jae-Min

  Information & Electronic Material Research Laboratory, Department of Materials Science and Engineeri

• Sohn Kee-sun

  Department Of Materials Science And Metallurgical Engineering Sunchon National University

• Hwang Deuk-Kyu

  Information & Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea

• Myoung Jae-Min

  Information & Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea

• Sohn Kee-Sun

  Department of Materials Science and Metallurgical Engineering, Sunchon National University, Chonam 540-742, Korea

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