Hole-Mediated Ferromagnetic Properties in Zn1-xMnxO Thin Films
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概要
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We report on the room-temperature hole-mediated ferromagnetism in Zn1-xMnxO thin films. Zn1-xMnxO ($x = 0.03$ and 0.20) films were prepared on GaAs (001) substrates by the rf magnetron cosputtering method. At the substrate temperature high enough to activate As diffusion from GaAs substrates, p-type Zn1-xMnxO films were synthesized. The superconducting quantum interference device (SQUID) and alternating gradient magnetometer (AGM) results clearly showed ferromagnetic characteristics at room temperature.
- 2004-02-15
著者
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HAM Moon-Ho
Information & Electronic Material Research Laboratory, Department of Materials Science and Engineeri
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MYOUNG Jae-Min
Information & Electronic Material Research Laboratory, Department of Materials Science and Engineeri
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LIM Sang-Wook
Information & Electronic Materials Research Laboratory, Department of Materials Science and Engineer
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Ham Moon-Ho
Information & Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Korea
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Jeong Min-Chang
Information & Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Korea
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Jeong Min-Chang
Information & Electronic Material Research Laboratory, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea
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Lim Sang-Wook
Information & Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Korea
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Myoung Jae-Min
Information & Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Korea
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