Hillock Formation of SnO2 Thin Films Prepared by Metal-Organic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
SnO2 thin films were deposited at 375°C on an alumina substrate by metal-organic chemical vapor deposition (MOCVD). The number of hillocks on the thin-film surface increased with air annealing. The oxygen content and binding energy during air annealing at 500°C came close to those of stoichiometric SnO2. The cauliflower-like hillocks observed seem to be the result of the continuous migration of tiny grains to release the stress of an expanded grain.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-11-15
著者
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Ryu Hyun-wook
Research Institute Of Energy Resources Technology Chosun University
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Park Kyung-hee
Research Institute Of Energy Resources Technology Chosun University
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SEO Yong-Jin
Daebul University
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LEE Woo-Sun
Chosun University
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HONG Kwang-Jun
Chosun University
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SHIN Dong-Charn
Chosun University
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PARK Jin-Seong
Chosun University
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AKBAR Sheikh
CISM, The Ohio State University
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Lee Woo-Sun
Chosun University, 375 Seosuk-dong, Gwangju 501-759, Korea
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Seo Yong-Jin
Daebul University, 72 Samho-myeon, Yeongam-gun 526-702, Korea
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Ryu Hyun-Wook
Research Institute of Energy Resources Technology, Chosun University, 375 Seosuk-dong, Gwangju 501-759, Korea
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Akbar Sheikh
CISM, 291 Watts, 2041 College Rd, Columbus, OH 43210, USA
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Park Kyung-Hee
Research Institute of Energy Resources Technology, Chosun University, 375 Seosuk-dong, Gwangju 501-759, Korea
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Shin Dong-Charn
Chosun University, 375 Seosuk-dong, Gwangju 501-759, Korea
関連論文
- Hillock Formation of SnO_2 Thin Films Prepared by Metal-Organic Chemical Vapor Deposition
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- Hillock Formation of SnO2 Thin Films Prepared by Metal-Organic Chemical Vapor Deposition
- Growth and Surface Morphology of Textured NiO Thin Films Deposited by Off-Axis RF Magnetron Sputtering