Contact Resistivity between an Al Metal Line and an Indium Tin Oxide Line of Thin Film Transistor Liquid Crystal Displays

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概要

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• The contact resistivity ($\rho_{\text{C}}$) between indium tin oxide (ITO) and a metal line composed of Mo buffer layers and an Al layer has been studied. If O2 gas is used in the contact hole etching process, $\rho_{\text{C}}$ increases according to the increment of the etching time. However, $\rho_{\text{C}}$ is invariant with the non-oxygen gas dry etching process. The interfacial layer between Mo and Al hinders the diffusion of the oxygen from ITO to Al but does not hinder the diffusion of the energetic oxygen from the etching plasma to Al.

• 2002-02-15

著者

• Kim Hyun-jin

  Array Process Technology Group Lcd R&d Center Hyundai Display Technology Inc.

• Lee Won-geon

  Array Process Technology Group Lcd R&d Center Hydis

• Lee Ho-nyeon

  Array Process Technology Group Lcd R&d Center Hydis

• Park Jae-chel

  Array Process Technology Group Lcd R&d Center Hyundai Display Technology Inc.

• Lee Won-Geon

  Array Process Technology Group, LCD R&D Center, Hyundai Display Technology Inc., Ichon 467-701, Korea

関連論文

• Contact Resistivity between an Al Metal Line and an Indium Tin Oxide Line of Thin Film Transistor Liquid Crystal Displays
• Reduction of Contact Resistivity between Al Alloy Layer and Indium Tin Oxide Layer by Fluorine Plasma Treatment : Surfaces, Interfaces, and Films
• Contact Resistivity between an Al Metal Line and an Indium Tin Oxide Line of Thin Film Transistor Liquid Crystal Displays

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