Contact Resistivity between an Al Metal Line and an Indium Tin Oxide Line of Thin Film Transistor Liquid Crystal Displays
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概要
- 論文の詳細を見る
- 2002-02-15
著者
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Kim H‐j
Array Process Technology Group Lcd R&d Center Hyundai Display Technology Inc.
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Kim Hyun-jin
Array Process Technology Group Lcd R&d Center Hyundai Display Technology Inc.
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Lee Won-geon
Array Process Technology Group Lcd R&d Center Hydis
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Lee Won-geon
Array Process Technology Group Lcd R&d Center Hyundai Display Technology Inc.
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LEE Ho-Nyeon
Array Process Technology Group, LCD R&D Center, Hyundai Display Technology Inc.
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PARK Jae-Chel
Array Process Technology Group, LCD R&D Center, Hyundai Display Technology Inc.
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Lee H‐n
Boe-hydis Kyoungki-do Kor
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Lee Ho-nyeon
Array Process Technology Group Lcd R&d Center Hydis
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Park Jae-chel
Array Process Technology Group Lcd R&d Center Hyundai Display Technology Inc.
関連論文
- Contact Resistivity between an Al Metal Line and an Indium Tin Oxide Line of Thin Film Transistor Liquid Crystal Displays
- Reduction of Contact Resistivity between Al Alloy Layer and Indium Tin Oxide Layer by Fluorine Plasma Treatment : Surfaces, Interfaces, and Films
- Contact Resistivity between an Al Metal Line and an Indium Tin Oxide Line of Thin Film Transistor Liquid Crystal Displays