Reduction of Contact Resistivity between Al Alloy Layer and Indium Tin Oxide Layer by Fluorine Plasma Treatment : Surfaces, Interfaces, and Films

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概要

• 論文の詳細を見る

• The effect of fluorine plasma treatment on an aluminum and neodymium alloy (Al-Nd) layer has been studied. The fluorine plasma replaces Al-O bonds with Al-F bonds on the surface of Al-Nd. The layer of Al-F bonds is preserved even if an indium tin oxide (ITO) layer is deposited on it. This layer prohibits the interfacial reaction from producing an AlO_x layer between ITO and Al-Nd. The contact resistivity between ITO and Al-Nd is reduced to about 100 μΩ・cm^2 by this fluorine plasma treatment.

• 社団法人応用物理学会の論文
• 2002-04-01

著者

• Lee Won-geon

  Array Process Technology Group Lcd R&d Center Hydis

• LEE Ho-Nyeon

  Array Process Technology Group, LCD R&D Center, Hyundai Display Technology Inc.

• PARK Jae-Cheol

  Array Process Technology Group, LCD R&D Center, HYDIS

• Lee Ho-nyeon

  Array Process Technology Group Lcd R&d Center Hydis

• Park Jae-cheol

  Array Process Technology Group Lcd R&d Center Hydis

関連論文

• Contact Resistivity between an Al Metal Line and an Indium Tin Oxide Line of Thin Film Transistor Liquid Crystal Displays
• Reduction of Contact Resistivity between Al Alloy Layer and Indium Tin Oxide Layer by Fluorine Plasma Treatment : Surfaces, Interfaces, and Films
• Contact Resistivity between an Al Metal Line and an Indium Tin Oxide Line of Thin Film Transistor Liquid Crystal Displays

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