Temperature Dependence of Field-Emission Characteristics from a p-Type Si Single Emitter with Real Surface
スポンサーリンク
概要
- 論文の詳細を見る
The temperature dependence of field-emission current from a p-type Si single emitter with a real surface was investigated. The field emission pattern of the emitter did not show any symmetry which indicates a clean crystal structure of the surface; however, the highly nonlinear characteristics in $\log(I/V^{2})$ vs $1/V$ plots (F-N plots) commonly observed from a clean p-type Si emitter are obtained. The emission current at the gentle slope region of F-N plots ($I_{\text{sat}}$) shows strong temperature dependence at a fixed applied voltage. The slope of $\log I_{\text{sat}}$ vs $1/T$ plots gives an activation energy of 0.58 eV@. The most probable conclusion is that the Fermi level is pinned at the middle of the band gap of the surface and electrons generated from the surface state to the conduction band are emitted.
- 2001-06-15
著者
-
IWATA Tatsuo
Department of Electronic and Information Technology, School of Engineering, Hokkaido Tokai Universit
-
Kikuchi Satoru
Eniwa Development Center, Kyoto Semiconductor Corporation, 385-31 Toiso, Eniwa, Hokkaido 061-1405, Japan
-
Iwata Tatsuo
Department of Information Science, Hokkaido Tokai University, 5-1-1-1 Minamisawa, Minami-ku, Sapporo 005-8601, Japan
-
Yokogawa Naohiro
Eniwa Development Center, Kyoto Semiconductor Corporation, 385-31 Toiso, Eniwa, Hokkaido 061-1405, Japan
-
Yoshimoto Tomomi
Department of Electrical, Electronic, and Computer Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585, Japan
-
YOSHIMOTO Tomomi
Department of Electrical, Electronic, and Computer Engineering, Toyo University
関連論文
- Field Emission from a P-Type Silicon Single Emitter Sharpened by Focused Ion Beam Milling
- Influence of Desorption of Gases from the Anode on the Reading of Pressure Determined by Field Emission Microscopy
- Temperature Dependence of Field-Emission Characteristics from a p-Type Si Single Emitter with Real Surface