Field Emission from a P-Type Silicon Single Emitter Sharpened by Focused Ion Beam Milling

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概要

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• The field emission properties of a p-type Si single emitter that was sharpened by focused ion beam (FIB) milling were investigated. Typical nonlinear Fowler–Nordheim (FN) plots commonly observed in a p-type Si emitter were maintained in a Ga+ ion FIB-milled emitter. The emitter sharpened by FIB milling exhibited a low turn-on voltage. Excellent stability of the emission current was obtained from the FIB-milled emitter.

• 2010-07-25

著者

• Iwata Tatsuo

  Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 135-8505, Japan

• Sato Kazuki

  Intelligent Material and Mechatronics Systems, Graduate School of Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585, Japan

• Yoshimoto Tomomi

  Department of Electrical, Electronic, and Computer Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585, Japan

• YOSHIMOTO Tomomi

  Department of Electrical, Electronic, and Computer Engineering, Toyo University

関連論文

• Field Emission from a P-Type Silicon Single Emitter Sharpened by Focused Ion Beam Milling
• Temperature Dependence of Field-Emission Characteristics from a p-Type Si Single Emitter with Real Surface

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