Quantum Size Effects of InAs- and InGaAs-Quantum Dots Studied by Scanning Tunneling Microscopy/Spectroscopy
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概要
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Scanning tunneling spectroscopy has been used to study quantum size effects on the electronic structure of InAs and In0.46Ga0.54As quantum dots (QDs) in correlation with their morphologies. It is found that for both samples, the measured band gap increases with decreasing dot height. The observed height dependence of the gap energy has been well reproduced by the calculation based on a one-dimensional quantum well model. For the In0.46Ga0.54As QD, however, enrichment of In-composition in the dot compared to the nominal composition has been observed.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-30
著者
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Nakamura Arao
Center For Integrated Research For Science And Engineering (cirse) And Department Of Applied Physics
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Ohyama Yasuaki
Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
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Matsuba Yasushi
Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
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Yamauchi Takeshi
Center for Integrated Research in Science and Engineering (CIRSE), Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
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Tabuchi Masao
Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
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