Femtosecond Dynamics of Carrier Relaxation and Exciton Formation in Zn_<1-X>Cd_XSe/ZnS_YSe_<1-Y> Multiple-Quantum-Well Structures
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概要
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We have investigated the intraband carrier relaxation and exciton formation dynamics in a Zn_<0.88>Cd_<0.12>Se/ZnS_<0.88>Se_<0.88> multiple quantum well using a femtosecond pump and probe method. We have analyzed the spectral shape of the exciton absorption band, and obtained the temporal change of the homogeneous broadening. The homogeneous width of the heavyhole exciton absorption shows the delayed rise of 〜1 ps and the two-component decay with decay times of 〜10 ps and 〜100 ps. These behaviors are dependent on temperature and pumping wavelength. The temporal behavior of the additional broadening has been explained by the numerical simulation, taking into account the intraband carrier relaxation and the exciton formation.
- 社団法人応用物理学会の論文
- 1999-06-15
著者
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Nakamura Arao
Center For Integrated Research In Science And Engineering (cirse) And Department Of Applied Physics
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Nakamura Arao
Center For Integrated Research For Science And Engineering (cirse) And Department Of Applied Physics
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Tokizaki T
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology
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Tokizaki Takashi
Center For Integrated Research In Science And Engineering (cirse) And Department Of Applied Physics
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SAKAI Hiroshi
Center for Integrated Research in Science and Engineering (CIRSE), and Department of Applied Physics
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KOGANO Gentaro
Center for Integrated Research in Science and Engineering (CIRSE), and Department of Applied Physics
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Kogano Gentaro
Center For Integrated Research In Science And Engineering (cirse) And Department Of Applied Physics
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Sakai Hiroshi
Center For Integrated Research In Science And Engineering (cirse) And Department Of Applied Physics
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