Defect Printability for 100 nm Patterns in X-Ray Lithography

概要

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In order to estimate the sensitivity required for the next-generation inspection system for X-ray masks, we studied defect printability using the lithographic simulator, Toolset. In a previous work, based on 10nm critical dimension (CD) error, we reported the sensitivity of defect inspection for 100 nm line-and-space (L&S) patterns. In this study, we focused on have investigated the CD errors due to various defects such as adhesion of organic materials, and clear and opaque defects at the edge or the center of the space in 100 nm L&S, isolated space, and hole patterns, particularly for a low-contrast mask. From the present study, it has been confirmed that organic defects are rarely printed in X-ray lithography. Moreover, the maximum critical defect size resulting in 10 nm CD errors is estimated to be 30 nm for clear defects and 24 nm for opaque defects in 100 nm patterns. Therefore, the required detection sensitivity is somewhat more relaxed than the critical defect size (20 nm) required by the International Technology Roadmap for Semiconductors (ITRS).
Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
2001-02-15