Characterization of Low-Dielectric-Constant Methylsiloxane Spin-on-Glass Films

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概要

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• The structure of the methylsiloxane spin-on-glass (SOG) film obtained by coating the SOG solution prepared from methyltriethoxysilane and dimethyoxymethyl-3,3,3-trifluoropropylsilane, followed by curing at 450°C in nitrogen to decompose the trifluoropropyl group, has been characterized. Outgassing from the SOG film was small except for the organic species derived from a methyl group which began to be desorbed above 500°C. The SOG film was found to consist of particulates with a diameter of several nm. No pores were found in the SOG film by atomic force microscopy (AFM) and transmission electron microscopy (TEM) observations. Pores introduced by the thermal decomposition of a trifluoropropyl group appear to be so small that the boundary between the pore and a siloxane network is ambiguous. A 29Si nuclear magnetic resonance (NMR) experiment has revealed that new Si–O–Si bonds are formed between the two Si atoms derived from dimethyoxymethyl-3,3,3-trifluoropropylsilane after the thermal decomposition of the trifluoropropyl group.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2000-03-15

著者

• YAMADA Noriko

  Advanced Materials & Technology Research Laboratories, Nippon Steel Corporation

• Takahashi Toru

  Advanced Technology Research Laboratories Nippon Steel Corporation(present Address)japan Institute O

• Takahashi Toru

  Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan

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• Effects of Alkaline-Earth Elements on Refractive Index Profile and Domain Inversion of Rb-Exchanged Waveguide in KTiOPO_4
• Characterization of Low-Dielectric-Constant Methylsiloxane Spin-on-Glass Films
• Annealing Effects on Second Harmonic Generation of Segmented KTiOPO4 Waveguides
• Characterization of Low-Dielectric-Constant Methylsiloxane Spin-on-Glass Films

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