InAlAs/InGaAs Metamorphic High Electron Mobility Transistors on GaAs Substrate: Influence of Indium Content on Material Properties and Device Performance
スポンサーリンク
概要
- 論文の詳細を見る
The development of lattice mismatched InAlAs/InGaAs high electron mobility transistors on high-quality GaAs substrates (metamorphic HEMT) is of primary interest for millimeter-wave devices. These heterostructures grown on lattice mismatched substrates allow an extension of the composition range in the structures and to exploit enhanced properties, provided that the crystalline perfection of the layers as well as electrical quality are preserved. The aim of this work is to study the influence of indium mole fraction on material properties as well as its consequences on device performance.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1999-02-28
著者
-
Ferre Denise
Lspes Ura 234 Universite Des Sciences Et Technologies De Lille
-
Zaknoune Mohammed
Institut D'electronique Et De Microelectronique Du Nord U.m.r.-c.n.r.s 9929 Avenue Poincare Uni
-
Cordier Yvon
Institut d'Electronique et de Microélectronique du Nord, U.M.R.-C.N.R.S 9929,
-
Bollaert Sylvain
Institut d'Electronique et de Microélectronique du Nord, U.M.R.-C.N.R.S 9929,
-
Dipersio Jean
LSPES, URA 234, Université des Sciences et Technologies de
-
Dipersio Jean
LSPES, URA 234, Université des Sciences et Technologies de
-
Zaknoune Mohammed
Institut d'Electronique et de Microélectronique du Nord, U.M.R.-C.N.R.S 9929,
関連論文
- InAlAs/InGaAs Metamorphic High Electron Mobility Transistors on GaAs Substrate : Influence of Indium Content on Material Properties and Device Performance
- InAlAs/InGaAs Metamorphic High Electron Mobility Transistors on GaAs Substrate: Influence of Indium Content on Material Properties and Device Performance