Real Time Measurements of Phase Change Dynamics

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概要

• 論文の詳細を見る

• We present reflectivity measurements allowing the quantitative determination of crystallization times from 103 s down to 10-8 s. For the slow speeds the crystallization of a written mark at constant temperatures is monitored. For the fast speeds time resolved measurements are employed. The presented experimental methods show a high potential to yield information on stoichiometry induced variation of the crystallization speed and on the physical mechanism of phase change processes.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1998-04-30

著者

• Trappe Cyril

  Institute Of Semiconductor Electronics Ii Rheinisch-westfailsche Technische Hochschule Sommerfeldstr

• Facsko Stefan

  Institute Of Semiconductor Electronics Ii Rheinisch-westfailsche Technische Hochschule Sommerfeldstr

• Kurz Heinrich

  Institut für Halbleitertechnik, RWTH Aachen, D-52074 Aachen, Germany

• Kurz Heinrich

  Institute of Semiconductor Electronics II, Rheinisch-Westfälische Technische Hochschule, Sommerfeldstr. 24, D-52074 Aachen, Germany

• Béchevet Bernard

  Laboratoir d'électronique de technologie et d'instrumentation, 17 rue des Martyrs, F-38054 Grenoble, France

• Béchevet Bernard

  Laboratoir d'électronique de technologie et d'instrumentation, 17 rue des Martyrs, F-38054 Grenoble, France

• Facsko Stefan

  Institute of Semiconductor Electronics II, Rheinisch-Westfälische Technische Hochschule, Sommerfeldstr. 24, D-52074 Aachen, Germany

関連論文

• Recrystallization Dynamics of Phase Change Optical Disks with a Nitrogen Interface Layer
• Coulomb Blockade Effects in a Highly Doped Silicon Quantum Wire Fabricated on Novel Molecular Beam Epitaxy Grown Material
• Real Time Measurements of Phase Change Dynamics
• Bloch Oscillations in Semiconductor Superlattices
• Influence of Hot Carrier Diffusion on the Density Limitation of Optical Data Storage
• Real Time Measurements of Phase Change Dynamics

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