Hydrogenated Silicon-Oxynitride Film Antireflective Layer for Optical Lithography

スポンサーリンク

概要

• 論文の詳細を見る

• We present a theoretical method for antireflective layer (ARL) optimization in optical lithography and report the performance of hydrogenated silicon oxynitride ( SiO xN y:H) film used as an ARL for krypton fluoride (KrF) excimer laser lithography. The optimum optical conditions of an ARL for tungsten silicide (W–Si) and aluminum silicon (Al–Si) substrates, which minimize the fluctuation of energy absorption in photoresists for photoresist thickness variations, are investigated. There are two types of optimum optical conditions, which give zero reflectance with the first and second cycle in thin film interference effects in an ARL, respectively. A type of SiO xN y:H, which can satisfy the optimum optical conditions of an ARL for W–Si and Al–Si substrates, was found from the standpoints of its spectroscopic characteristics. Refractive indices of SiO xN y:H film at the wavelength of 248 nm can be controlled by varying the deposition conditions in a plasma-enhanced chemical vapor deposition system. The variations in critical dimension caused by the thin-film interference effects in the photoresist for W–Si and Al–Si substrates are drastically reduced to within 0.02 µ m for 0.30 µ m patterns using this SiO xN y:H film. Moreover, these SiO xN y:H films can be left in the device structure without any influence on the electronic characteristics.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-06-15

著者

• OGAWA Tohru

  ULSI R & D Laboratories, SONY Corporarion, Atsugi Technology Center

• Gocho Tetsuo

  Mos Lsi Division Semiconductor Co. Sony Corp.

• Tsukamoto Masanori

  MOS LSI Division, Semiconductor Co., Sony Corp., 4-14-1 Asahi-cho, Atsugi, Kanagawa 243, Japan

• Nakano Hiroyuki

  MOS LSI Division, Semiconductor Co., Sony Corp., 4-14-1 Asahi-cho, Atsugi, Kanagawa 243, Japan

• Ogawa Tohru

  ULSI R&D Laboratories, Semiconductor Co., Sony Corp., 4-14-1 Asahi-cho, Atsugi, Kanagawa 243, Japan

• Gocho Tetsuo

  MOS LSI Division, Semiconductor Co., Sony Corp., 4-14-1 Asahi-cho, Atsugi, Kanagawa 243, Japan

関連論文

• Chemical Vapor Deposition of Anti-Reflective Layer Film for Excimer Laser Lithography
• New Systematic Evaluation Method for Attenuated Phase-Shifting Mask Specifications
• Advantages of a SiO_xN_y:H Anti-Reflective Layer for ArF Excimer Laser Lithography
• Hydrogenated Silicon-Oxynitride Film Antireflective Layer for Optical Lithography

スポンサーリンク