Advantages of a SiO_xN_y:H Anti-Reflective Layer for ArF Excimer Laser Lithography
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-12-30
著者
-
OGAWA Tohru
ULSI R & D Laboratories, SONY Corporarion, Atsugi Technology Center
-
Ogawa Tohru
Ulsi R&d Laboratories Semiconductor Co. Sony Corp.
-
SEKIGUCHI Atsushi
ULSI R&D Laboratories, Semiconductor Co., SONY Corp.
-
YOSHIZAWA Noritsugu
ULSI R&D Laboratories, Semiconductor Co., SONY Corp.
-
Yoshizawa Noritsugu
Ulsi R&d Laboratories Semiconductor Co. Sony Corp.
-
Sekiguchi Atsushi
Ulsi R&d Laboratories Semiconductor Co. Sony Corp.
関連論文
- Chemical Vapor Deposition of Anti-Reflective Layer Film for Excimer Laser Lithography
- New Systematic Evaluation Method for Attenuated Phase-Shifting Mask Specifications
- Advantages of a SiO_xN_y:H Anti-Reflective Layer for ArF Excimer Laser Lithography
- Hydrogenated Silicon-Oxynitride Film Antireflective Layer for Optical Lithography