Cross-Contamination from Etching Materials in Reactive Ion Etcher

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概要

• 論文の詳細を見る

• This paper reports the necessity of dedicating a reactive ion etching system for SiO2 according to etching materials. Silicon wafers etched with TiN-, Ti- or Al-coated wafers were analyzed using total reflection X-ray fluorescence and secondary ion mass spectroscopy. The amount of contamination varied with distance from the metal coated wafers. Si etched after removing the metal-coated wafers were then analyzed. Contamination was also detected, though it decreased with increasing discharge time. The contamination is believed to be due to the collisions of reaction products with reactive gas molecules and redeposition of those products onto the cathode. The contamination is decreased to detection limit by dipping into a diluted HF solution. However, the carrier lifetime of the etched wafer is severely affected by contamination less than detection limit.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1997-05-15

著者

• OZAKI Yoshiharu

  NTT, System Electronics Laboratories

• KIMIZUKA Masakatsu

  NTT, System Electronics Laboratories

• Ozaki Yoshiharu

  NTT, System Electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan

関連論文

• Low-Pulse-Energy Excimer-Laser-Induced Damage in Thermally Oxidized Si(100) Substrates
• Cross-Contamination from Etching Materials in Reactive Ion Etcher
• Cross-Contamination from Etching Materials in Reactive Ion Etcher

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