Low-Pulse-Energy Excimer-Laser-Induced Damage in Thermally Oxidized Si(100) Substrates

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概要

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• Thermally oxidized Si (100) substrates were irradiated with excimer laser pulses with a low energy density, and the minority-carrier recombinetion lifetime and interface state density were measured. Irradiation with an ArF (λ=193nm) excimer laser shortened the lifetime and raised the interface state density. These effects depend on the fluence, but not the energy density, of the pulses. Irradiation with KrCl (λ=222nm), KrF (λ=248nm), and XeCl (λ=308nm) excimer lasers did not affect the lifetime.

• 社団法人応用物理学会の論文
• 1998-07-15

著者

• OZAKI Yoshiharu

  NTT, System Electronics Laboratories

関連論文

• Low-Pulse-Energy Excimer-Laser-Induced Damage in Thermally Oxidized Si(100) Substrates
• Cross-Contamination from Etching Materials in Reactive Ion Etcher
• Cross-Contamination from Etching Materials in Reactive Ion Etcher

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