Influence of Statistical Spatial-Nonuniformity of Dopant Atoms on Threshold Voltage in a System of Many MOSFETs

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概要

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• We have experimentally and analytically studied the influence of the statistical spatial-nonuniformity of dopant atoms on the threshold voltage V th in a system of many metal-oxide-semiconductor field-effect-transistors (MOSFETs). According to experimental results and our analytical model, it is found that the nonuniformity of dopant atoms along the channel (the lateral nonuniformity) causes the unstable drain bias V d dependence of V th, whereas the standard deviation of V th has weak dependence of V d. Moreover, the substrate bias dependence of V th fluctuates due to the vertical nonuniformity of dopant atoms which is perpendicular to the channel. Consequently, V th fluctuation is caused by the statistical spatial-nonuniformity of dopant atoms as well as their total-number variation in the channel depletion volume.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-02-28

著者

• Mizuno Tomohisa

  Ulsi Research Labaratories Toshiba Corporation

• Mizuno Tomohisa

  ULSI Research Labaratories, Toshiba Corporation, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

関連論文

• A High-Performance 0.05 μm SOI MOS FET:Possibility of Velocity Overshoot
• A High Performance 0.05μm MOSFET with Thin SOI/Buried Oxide Structure
• Statistical Performance-Instability Due to Three-Dimensional Nonuniformity of Dopant Atoms in a System of Many MOSFETs
• Influence of Statistical Spatial-Nonuniformity of Dopant Atoms on Threshold Voltage in a System of Many MOSFETs

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