Statistical Performance-Instability Due to Three-Dimensional Nonuniformity of Dopant Atoms in a System of Many MOSFETs

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• Mizuno Tomohisa

  Ulsi Research Laboratories Toshiba Corporation

• Mizuno Tomohisa

  Ulsi Research Labaratories Toshiba Corporation

関連論文

• A High-Performance 0.05 μm SOI MOS FET:Possibility of Velocity Overshoot
• A High Performance 0.05μm MOSFET with Thin SOI/Buried Oxide Structure
• Statistical Performance-Instability Due to Three-Dimensional Nonuniformity of Dopant Atoms in a System of Many MOSFETs
• Influence of Statistical Spatial-Nonuniformity of Dopant Atoms on Threshold Voltage in a System of Many MOSFETs

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