Semi-Insulating P0-Region in Si-Doped GaAs Diodes

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概要

• 論文の詳細を見る

• Variations of the thickness of the P0-region as a function of Si doping levels in Si-doped GaAs diodes are studied. The thickness gradually decreases as the Si concentration increases. The results are well explained in terms of the variation of the Si concentration gradient near the p-n junction.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-07-20

著者

• Choe Byungdoo

  Department Of Physics Seoul National University

• Park Seounghwan

  Department Of Physics Hyosung Women's University

• Choe Byungdoo

  Department of Physics, Seoul National University, Shinlim-Dong, Kwanak-Gu, Seoul, Korea

• Park Seounghwan

  Department of Physics, Hyosung Women's University, Hayang, Gyeongsan, Kyeongbuk, 713-702, Korea

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• Semi-Insulating P0-Region in Si-Doped GaAs Diodes

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