Origin of the Long-Wavelength-Side Peakin Al_xGa_<1-x>As:Si Light-Emitting Diodes

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概要

• 論文の詳細を見る

• The origin of the long-wavelength-side peak (peak B) in Al_xGa_<x-1>As:Si light-emitting diodes is studied by investigating the relationships between radiative spectra and spatial distribution of the luminescence. Peak B originates from a recombination barrier existing in the P-P^o boundary. Invariance of the energy of peak B independent of injection level can be explained by the dominance of the band-impurity (BI) transition in the P-P^o boundary.

• 社団法人応用物理学会の論文
• 1993-07-15

著者

• PARK Seounghwan

  Department of Physics, Hyosung Women's University

• CHOE Byungdoo

  Department of Physics, Seoul National University

• Choe Byungdoo

  Department Of Physics Seoul National University

• GHO Seokjung

  Department of Physics, Seoul National University

• Gho Seokjung

  Department Of Physics Seoul National University

• Park Seounghwan

  Department Of Physics Hyosung Women's University

関連論文

• Optimization of Threshold Current Density for Compressive-Strained InGaAs/GaAs Quantum Well Lasers
• A Method for Studying the Electric Field Enhanced Emission of Carriers from Deep Levels
• Negative Resistance in Al_xGa_As:Si Red Light-Emitting Diodes
• Origin of the Long-Wavelength-Side Peakin Al_xGa_As:Si Light-Emitting Diodes
• Semi-Insulating P0-Region in Si-Doped GaAs Diodes

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