Negative Resistance in Al_xGa_<1-x>As:Si Red Light-Emitting Diodes

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概要

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• A negative resistance is directly observed near 77 K in Si-doped Al_xGa_<1-x>As diodes with a P-P゜-N structure. A strong emission at the P゜-P boundary originating from the recombination barrier is also directly observed. The negative resistance can be explained by the trap-filling mechanism.

• 社団法人応用物理学会の論文
• 1988-06-20

著者

• PARK Seounghwan

  Department of Physics, Hyosung Women's University

• Choe Byungdoo

  Department Of Physics Seoul National University

• JANG Seongjoo

  Department of Physics, Chonnam National University

• Jang Seongjoo

  Department Of Physics Chonnam National University

• Park Seounghwan

  Department Of Physics Seoul National University

• Park Seounghwan

  Department Of Physics Hyosung Women's University

関連論文

• Optimization of Threshold Current Density for Compressive-Strained InGaAs/GaAs Quantum Well Lasers
• A Method for Studying the Electric Field Enhanced Emission of Carriers from Deep Levels
• Negative Resistance in Al_xGa_As:Si Red Light-Emitting Diodes
• Origin of the Long-Wavelength-Side Peakin Al_xGa_As:Si Light-Emitting Diodes
• Semi-Insulating P0-Region in Si-Doped GaAs Diodes

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