AES Study of the Reaction between a Thick Fe-Film and $\beta$-SiC (100) Surface

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概要

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• The solid state reaction between a thick Fe-film and $\beta$-SiC (100) surface in UHV has been studied using AES in conjunction with ion sputtering. Upon annealing of the thick-Fe-film/SiC at 250°C, only the C-atoms diffused to the film surface and exhibited a Fe3C feature. During a 540°C anneal, the Si-atoms also segregated at the surface through grain boundary diffusion and formed the elemental-Si and the Fe-silicide phase. The depth profile showed that the atomic ratio among silicide, Fe3C, graphite and unreacted-Fe in the film was approximately 1:2:0.8:15, indicating a limited reaction. Big pile-ups of both Fe3C and elemental-Si were detected at the Fe–SiC interface, which suggests that the Fe3C acts as a reaction barrier and prevents the free Si-atoms from diffusing into the Fe-film.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-12-20

著者

• Nakanishi Shigemitsu

  College of Integrated Arts and Sciences, University of Osaka Prefecture

• MIZOKAWA Yusuke

  College of Integrated Arts and Sciences, University of Osaka Prefecture

• Miyase Sunao

  College of Integrated Arts and Sciences, University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591

関連論文

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• Direct Observation of ^O Tracer Diffusion in a YBa_2Cu_3O_y Single Crystal by Secondary Ion Mass Spectrometry
• Investigation of Reoxidation and Phosphorus Behavior in HF-Treated Heavily Doped Silicon Surfaces
• AES Study of the Reaction between a Thin Fe-Film and $\beta$-SiC (100) Surface
• AES Study of the Reaction between a Thick Fe-Film and $\beta$-SiC (100) Surface

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