AES Study of the Reaction between a Thin Fe-Film and $\beta$-SiC (100) Surface
スポンサーリンク
概要
- 論文の詳細を見る
The solid state reaction between thin Fe-films and $\beta$-SiC (100) in UHV has been studied using AES. Even at room temperature, the reaction between the thin Fe-film and SiC occurred and formed Fe-silicide and graphite with a minor product of Fe-carbide (Fe3C). The reaction proceeded with an increase of Fe-coverage to some extent. With annealing of 15 Å-Fe-film/SiC below 540°C, the Fe-silicide formation was accelerated, but because the amount of available Fe was small, the dissolved carbon atoms were forced to form not the Fe-carbide but the graphite phase. Above 640°C, the Fe-silicide started to decompose and the carbon atoms diffused to the surface and formed surface graphite layers. With annealing at 1080°C, the free-Si segregated at the surface and formed Si–Si bonds, as well as the Si–C bonds consuming the surface graphite phase.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-12-20
著者
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Nakanishi Shigemitsu
College of Integrated Arts and Sciences, University of Osaka Prefecture
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MIZOKAWA Yusuke
College of Integrated Arts and Sciences, University of Osaka Prefecture
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Nakanishi Shigemitsu
College of Integrated Arts and Sciences, University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591
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Miyase Sunao
College of Integrated Arts and Sciences, University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591
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Mizokawa Yusuke
College of Integrated Arts and Sciences, University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591
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- AES Study of the Reaction between a Thin Fe-Film and $\beta$-SiC (100) Surface
- AES Study of the Reaction between a Thick Fe-Film and $\beta$-SiC (100) Surface