Optical Band Gap of Electron-Beam-Evaporated Doped Silicon Films

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概要

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• The optical band gap of electron-beam-evaporated silicon films doped with antimony and boron is determined in both amorphous and microcrystalline structures. The value in the amorphous structure is 1.5 eV for the Sb-doped case, the same as the intrinsic case, while for B-doping, the gap is sharply decreased to 1.0 eV. For the microcrystalline structure, the values are all 1.7 eV for Sb- and B- doped cases as well as the intrinsic case.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-01-20

著者

• Kinnier J.

  Department Of Physics Boston College

• Fang P.

  Department Of Physics Boston College

• Ma Jun

  Xian Rectifier Research Institute, Xian, Shanxi, P.R.C.

• Chen Eryong

  Department of Physics, Boston College, Chestnut Hill, Massachusetts 02167, U.S.A.

• Miao Hong

  Xian Rectifier Research Institute, Xian, Shanxi, P.R.C.

• Kinnier J.

  Department of Physics, Boston College, Chestnut Hill, Massachusetts 02167, U.S.A.

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• Determination of Depth Distribution of X-Rays in Matter
• Applications of Back Reaction Kinetics in Defect Structure Analysis
• Optical Band Gap of Electron-Beam-Evaporated Doped Silicon Films

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