Microcrystal Silicon Film of 1.7 eV Optical Band Gap

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概要

• 論文の詳細を見る

• A prominent optical band gap of 1.7 eV has been observed in microcrystal silicon film prepared in vacuum at a substrate temperature of 625℃ by electron beam evaporation.

• 社団法人応用物理学会の論文
• 1983-03-20

著者

• Schubert C.

  Department Of Physics Boston College

• FANG P.

  Department of Physics, Boston College

• BAI Peiguang

  Department of Physics, Boston College

• KINNIER J.

  Department of Physics, Boston College

• Bai Peiguang

  Department Of Physics Boston College:(present Address) Department Of Physics Inner Mongolia Universi

• Kinnier J.

  Department Of Physics Boston College

• Fang P.

  Department Of Physics Boston College

関連論文

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• Determination of Depth Distribution of X-Rays in Matter
• Applications of Back Reaction Kinetics in Defect Structure Analysis
• Optical Band Gap of Electron-Beam-Evaporated Doped Silicon Films

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