Quantum Dot Activated All-inorganic Electroluminescent Device Fabricated Using Solution-Synthesized CdSe/ZnS Nanocrystals
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概要
- 論文の詳細を見る
We report a low temperature fabrication and light-emitting characteristics of inorganic electroluminescent (EL) devices in which a CdSe/ZnS quantum dot (QD) layer was formed by a new ion beam deposition process. The deposition process was developed for fabrication of surfactant- and solvent-free QD structured films from colloidally dispersed QD solution. The electroluminescence spectra of the alternating field driven devices were found to be identical to the photoluminescence spectra of the source solution. The finding paves the way for the development of full color, transparent, flexible, and low-cost large area flat panel displays.
- Japan Society of Applied Physicsの論文
- 2007-10-25
著者
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Kawazoe Hiroshi
R&D Center, HOYA Corporation, 3-3-1 Musashino, Akishima, Tokyo 196-8510, Japan
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Kobayashi Satoshi
R&D Center, HOYA Corporation, 3-3-1 Musashino, Akishima, Tokyo 196-8510, Japan
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Tani Yuki
R&D Center, HOYA Corporation, 3-3-1 Musashino, Akishima, Tokyo 196-8510, Japan
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Kawazoe Hiroshi
R&D Center, HOYA Corporation, 3-3-1 Musashino, Akishima, Tokyo 196-8510, Japan
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Tani Yuki
R&D Center, HOYA Corporation, 3-3-1 Musashino, Akishima, Tokyo 196-8510, Japan
関連論文
- Quantum Dot Activated All-inorganic Electroluminescent Device Fabricated Using Solution-Synthesized CdSe/ZnS Nanocrystals
- Ion Beam Deposition of Quantum Dots from Colloidal Solution
- Ion Beam Deposition Technique for Fabricating Luminescent Thin Films from a Solution of Nanocrystalline Semiconductor Dots