Ultrathin Layered Semiconductor: Si-Rich Transition Metal Silicide

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概要

• 論文の詳細を見る

• By ab initio calculation, we predict an atomically thin, stable layered semiconducting crystal (ZrSi12)n, which may be a prototype candidate material for the thin film channels of ultimately scaled metal–oxide–semiconductor (MOS) transistors. This material is composed of three atomic layers, in which a layer of Zr atoms is sandwiched by two layers of Si atoms. The Si atoms are arranged in graphene-like structures. This material is favorably formed from isolated ZrSi12 clusters. The energy band gap is of the indirect transition type and ${\sim}0.3$ eV in a generalized gradient approximation to the density functional theory. Both valence-band maximum and conduction-band minimum wavefunctions can be characterized by a hybrid of Zr $d$- and Si $ p$-orbitals.

• Japan Society of Applied Physicsの論文
• 2007-01-25

著者

• Kanayama Toshihiko

  Advanced Semiconductor Research Center Aist

• Kanayama Toshihiko

  Advanced Semiconductor Research Center, National Institute for Advanced Industrial Science and Technology, AIST Tsukuba West 7, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Miyazaki Takehide

  Quantum Modeling Group, Research Institute for Computational Sciences, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

関連論文

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• 27pZ-11 Scanning tunneling spectroscopy of silicon substrates deposited with hydrogenated Si clusters
• Ultrathin Layered Semiconductor: Si-Rich Transition Metal Silicide
• Multipole Ion Trap as Cluster-Ion Source

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