Forming Tapered Pattern by Cu Electrodeposition Through Mask on Ni Seed Layer for Thin-Film Transistors

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概要

• 論文の詳細を見る

• The fabrication of Cu gates for thin-film transistors (TFTs) by electrodeposition through mask on a Ni layer has been developed. After pretreatment in acid sulfate solution, a Cu deposit acquires the property of good adhesion on a Ni layer. Organic additives [e.g., poly(ethylene glycol) (PEG), bis(3-sodiumsulfopropyl) disulfide (SPS)] were used to create the desired tapered shape of the deposited Cu pattern on a Ni layer. Furthermore, a multilayer Cu gate for TFTs was fabricated after the selective etching of the nickel layer. The new method provides an alternative wet process for fabricating Cu gates for TFTs.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2006-11-25

著者

• Wang Yung

  Department Of Chemical Engineering National Tsing Hua University

• CHEN Jing

  Quanta Display Inc.

• Liu Po

  Display Institute National Chiao Tung University

• Li Hung

  Display Institute National Chiao Tung University

• Wan Chi

  Department Of Chemical Engineering National Tsing Hua University

• Jenq Shrane

  Department Of Chemical Engineering National Tsing Hua University

• Wang Yung

  Department of Chemical Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.

• Jenq Shrane

  Department of Chemical Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.

• Wan Chi

  Department of Chemical Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.

関連論文

• Forming Tapered Pattern by Cu Electrodeposition Through Mask on Ni Seed Layer for Thin-Film Transistors
• Forming Tapered Pattern by Cu Electrodeposition Through Mask on Ni Seed Layer for Thin-Film Transistors
• Forming Tapered Pattern by Cu Electrodeposition Through Mask on Ni Seed Layer for Thin-Film Transistors

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