Optimization of Annealing Process of Pulsed RF Decoupled Plasma Nitridation Oxynitrides
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概要
- 論文の詳細を見る
Optimization of post nitridation annealing (PNA) in plasma nitrided gate oxide integration exhibited reduction of gate leakage current and improvement of negative bias temperature instability (NBTI) without drive current loss have been demonstrated. An improved interface quality by a high temperature or a high pressure O2 PNA is the main factor to improve channel mobility. The addition of both post clean annealing (PCA) and post oxidation annealing (POA) allows for gate dielectric scaling down with the benefit of drive current improvement. An increase in oxide thickness and a decrease in relative nitrogen concentration resulted in the improvement of NBTI characteristics.
- 2005-04-10
著者
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Luo Tien-ying
Technology Solutions Freescale Semiconductor Inc.
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LIM Sang
Technology Solutions, Freescale Semiconductor Inc.
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Luo Tien-Ying
Technology Solutions, Freescale Semiconductor Inc., formerly Motorola's Semiconductor Sector, Austin, TX 78721, U.S.A.
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Tekleab Daniel
Technology Solutions, Freescale Semiconductor Inc., formerly Motorola's Semiconductor Sector, Austin, TX 78721, U.S.A.
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Grudowski Paul
Technology Solutions, Freescale Semiconductor Inc., formerly Motorola's Semiconductor Sector, Austin, TX 78721, U.S.A.
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Lim Sang
Technology Solutions, Freescale Semiconductor Inc., formerly Motorola's Semiconductor Sector, Austin, TX 78721, U.S.A.
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Grudowski Paul
Technology Solutions, Freescale Semiconductor Inc., formerly Motorola's Semiconductor Sector, Austin, TX 78721, U.S.A.
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Tekleab Daniel
Technology Solutions, Freescale Semiconductor Inc., formerly Motorola's Semiconductor Sector, Austin, TX 78721, U.S.A.
関連論文
- Behavior of Transconductance and Drive Current of Decoupled Plasma Nitridation Oxynitrides
- Optimization of Annealing Process of Pulsed RF Decoupled Plasma Nitridation Oxynitrides
- Behavior of Transconductance and Drive Current of Decoupled Plasma Nitridation Oxynitrides