Behavior of Transconductance and Drive Current of Decoupled Plasma Nitridation Oxynitrides

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概要

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• A thinner base oxide prior to decoupled plasma nitridation produced an improved high field transconductance normalized by oxide electrical thickness as compared to a thicker base oxide. Normalized peak transconductance at a lower electrical field is improved with a lower nitrogen concentration, but normalized transconductance at a higher electrical field is improved as the nitrogen concentration increases. Although there is a trend that drive current and gate leakage current are mainly determined by base oxide thickness, drive current shows a complicated dependency on a nitrogen concentration. The findings from transistor drive current characteristics are consistent with the behavior of transconductance.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-06-15

著者

• Luo Tien-ying

  Technology Solutions Freescale Semiconductor Inc.

• LIM Sang

  Technology Solutions, Freescale Semiconductor Inc.

• Lim Sang

  Technology Solutions, Freescale Semiconductor Inc., formerly Motorola's Semiconductor Sector, Austin, TX 78721, U.S.A.

関連論文

• Behavior of Transconductance and Drive Current of Decoupled Plasma Nitridation Oxynitrides
• Optimization of Annealing Process of Pulsed RF Decoupled Plasma Nitridation Oxynitrides
• Behavior of Transconductance and Drive Current of Decoupled Plasma Nitridation Oxynitrides

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