Growth of HfSiOx films by Vapor–Liquid Hybrid Deposition Utilizing Si(OC2H5)4/Hf(tOC4H9)4 Multilayer Adsorption

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概要

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• In this study, a HfSiOx deposition technique is described that takes advantage of the multilayer adsorption of Si(OC2H5)4 (TEOS) and Hf(tOC4H9)4 (HTB), followed by the hydrolysis of all of the layers in liquid water. A thickness distribution better than $\pm 3$% and a uniform Si:Hf ratio over the 4-in. wafer were achieved using this deposition technique. The n-type metal–insulator–semiconductor field-effect transistor (MISFET) incorporating the HfSiOx film exhibited well-behaved capacitance–voltage characteristics. The channel mobility of 81% compared well to the universal curve at an effective field of 0.8 MV cm-1.

• 2005-11-10

著者

• Yasuda Tetsuji

  Planning Headquarters Aist

• Hojo Daisuke

  Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc

• XUAN Yi

  MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Scie

• Hojo Daisuke

  MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Central 4, Tsukuba, Ibaraki 305-8562, Japan

• Yasuda Tetsuji

  Planning Headquarters, AIST, 1-1-1 Umezono, Central 2, Tsukuba, Ibaraki 305-8568, Japan

関連論文

• Growth of HfSiO_x films by Vapor-Liquid Hybrid Deposition Utilizing Si(OC_2H_5)_4/Hf(^tOC_4H_9)_4 Multilayer Adsorption
• Growth of HfSiOx films by Vapor–Liquid Hybrid Deposition Utilizing Si(OC2H5)4/Hf(tOC4H9)4 Multilayer Adsorption

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