Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes

概要

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Transparent conductive Ga-doped ZnO (ZnO:Ga) was fabricated to serve as p-contacts of InGaN-based light-emitting diodes (LEDs) using molecular-beam epitaxy. As-grown ZnO:Ga films typically have resistivities of $\rho=2-4\times 10^{-4}$ $\Omega$$\cdot$cm, and over 80% transparency in the near UV and visible wavelength ranges. The current-voltage characteristics between as-grown ZnO:Ga contacts and p-GaN layers were ohmic. The brightness of LEDs fabricated with ZnO:Ga p-contacts was nearly double compared to LEDs with conventional Ni/Au p-contacts. We obtained the external efficiency as high as 20.8% in the case of the near UV LED. The forward voltage at 20 mA was found not to increase even after the lamp LED with ZnO:Ga were kept for 80 h in high humidity and high temperature environments.
Japan Society of Applied Physicsの論文
2004-02-01