Fabrication of Direct Silicon Bonded Hybrid Orientation Substrate by Separation by Implanted Oxygen Layer Transfer and Oxide Dissolution Annealing

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The quasi direct Si bonded (DSB) hybrid orientation substrate with a 3 nm interfacial oxide layer between the (100) superficial Si and the (110) handle wafer is fabricated by the separation by implanted oxygen layer transfer (SLT) process. The quasi DSB hybrid orientation substrates are annealed in oxygen-containing and oxygen-free ambient. The cross-sectional transmission electron microscopy (XTEM) results show the oxide-free (100) Si/(110) Si bonding interface, indicating that the direct Si--Si bonded structure is realized by these two processes. The anisotropic bonding interface morphology of the DSB hybrid orientation substrates is observed, and the formation mechanism is discussed in detail.
2011-03-25

著者

Lin Chenglu
State Key Laboratory Of Functional Material For Informatics Shanghai Institute Of Microsystem And In
WEI Xing
State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and I
ZHANG Miao
State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and I
Wang Xi
State Key Laboratory Of Coal Combustion Huazhong University Of Science And Technology
Zhang Bo
State Key Laboratory Of Functional Material For Informatics Shanghai Institute Of Microsystem And In
Wu Aimin
State Key Laboratory Of Functional Material For Informatics Shanghai Institute Of Microsystem And In
Cao Gongbai
Shanghai Simgui Technology Co. Ltd.
Xue Zhongying
State Key Laboratory Of Functional Material For Informatics Shanghai Institute Of Microsystem And In
Wei Xing
State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, P. R. China
Zhang Miao
State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, P. R. China
Xue Zhongying
State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, P. R. China
Lin Chenglu
State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, P. R. China
Wu Aimin
State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, P. R. China
Cao Gongbai
Shanghai Simgui Technology Co., Ltd., 200 Puhui Road, Jiading, Shanghai 201821, P. R. China

Fabrication of Direct Silicon Bonded Hybrid Orientation Substrate by Separation by Implanted Oxygen Layer Transfer and Oxide Dissolution Annealing

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