非結晶Se/AI界面の結晶化とAIの拡散
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概要
- 論文の詳細を見る
Crystallization of the amorphous Se film deposited on Al drum is accelerated by Al diffusion into Se film. The crystallization near the interface has been observed by TEM and Raman spectroscopy. The diffusion process through the interface has been studied by SIMS.The annealing temperatures, even below 343 K, causes the diffusion of Al into Se film and results the crystallization near the Se/Al interface. Any crystallization, on the other hand, has not been observed at other interfaces of Se/Au and Se/glass. The difference in electronegativity between Al and Se suggests that the Al atom in Se behaves as a cation. The diffusion coefficients at 298 K and 323 K are estimated to be 1.7×10-14 and 4.6×10-13 (cm2/sec), respectively. The values are extremely larger than those of crystalline materials.These results suggest that the Al ions can easily diffuse into amorphous Se film and act as nuclei in the crystallization procedure.
- The Imaging Society of Japanの論文
The Imaging Society of Japan | 論文
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