STUDY OF CARRIER TRANSPORT IN a-Si: H FILMS
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概要
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Carrier transport in thin a-SiH devices was investigated by means of delayed field technique and steady-state photocurrent measurement. Electron lifetimes of a-SiH i-layers of p-i-n or n-i-Pd Schottky cells were from 0.3 to 1.0 μsec, but deep trapping lifetimes of the i-layers deposited after p-layers in the p-i-n cells were unable to be analyzed by a single lifetime. Mobility-lifetime products of the n-i-p and the Schottky cells with 3 μm i-layer were about 10-7 cm2/V, but they were reduced to about 10-8∼-9cm2/V when the i-layer was less than 1μm thick. These small value of mobility-lifetime products are explained by assuming the recombination centers or the deep trapping sites with large cross section located close to the p/i interface.
- The Imaging Society of Japanの論文
The Imaging Society of Japan | 論文
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